Abstract The introduction of micropores, reconstruction defects, and heteroatoms into monolayer graphene has been realized by utilizing photon energy in the ultraviolet (UV) region and reactive oxygen species. The defect density of monolayer graphene has been analyzed via the Raman spectral D/G intensity ratio, and the UV emission intensity near the graphene surface has been evaluated for varying oxygen concentrations. These investigations have shown that the reactive oxygen species dissociated from ozone efficiently influence the formation of defects in monolayer graphene, which can be controlled by the oxygen concentration under UV irradiation. The effective defect formation and heteroatom doping obtained by UV irradiation have been demonstrated by scanning transmission electron microscopy with electron energy-loss spectroscopy (STEM–EELS). Finally, in defect formation due to UV irradiation under an oxygen atmosphere, it has been demonstrated that the conductivity of defective graphene is maintained at the same level as pristine graphene because defects, such as vacancy-type and reconstructed-type defects, behave as adsorption sites, resulting in a hole doping effect from oxygen atoms or molecules.

中文翻译：

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在紫外线照射下使用活性氧物种在单层石墨烯中受控缺陷形成和杂原子掺杂

摘要 利用紫外 (UV) 区域的光子能量和活性氧物种，已实现将微孔、重构缺陷和杂原子引入单层石墨烯。已经通过拉曼光谱 D/G 强度比分析了单层石墨烯的缺陷密度，并针对不同的氧浓度评估了石墨烯表面附近的紫外线发射强度。这些研究表明，从臭氧中解离出来的活性氧有效地影响了单层石墨烯中缺陷的形成，这可以通过紫外线照射下的氧浓度来控制。通过具有电子能量损失光谱的扫描透射电子显微镜（STEM-EELS）证明了通过紫外线照射获得的有效缺陷形成和杂原子掺杂。