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Directly measuring the structural transition pathways of strain-engineered VO2 thin films.
Nanoscale ( IF 5.8 ) Pub Date : 2020-09-02 , DOI: 10.1039/d0nr04776g Egor Evlyukhin 1 , Sebastian A Howard , Hanjong Paik , Galo J Paez , David J Gosztola , Christopher N Singh , Darrell G Schlom , Wei-Cheng Lee , Louis F J Piper
Nanoscale ( IF 5.8 ) Pub Date : 2020-09-02 , DOI: 10.1039/d0nr04776g Egor Evlyukhin 1 , Sebastian A Howard , Hanjong Paik , Galo J Paez , David J Gosztola , Christopher N Singh , Darrell G Schlom , Wei-Cheng Lee , Louis F J Piper
Affiliation
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Epitaxial films of vanadium dioxide (VO2) on rutile TiO2 substrates provide a means of strain-engineering the transition pathways and stabilizing of the intermediate phases between monoclinic (insulating) M1 and rutile (metal) R end phases. In this work, we investigate structural behavior of epitaxial VO2 thin films deposited on isostructural MgF2 (001) and (110) substrates via temperature-dependent Raman microscopy analysis. The choice of MgF2 substrate clearly reveals how elongation of V–V dimers accompanied by the shortening of V–O bonds triggers the intermediate M2 phase in the temperature range between 70–80 °C upon the heating–cooling cycles. Consistent with earlier claims of strain-induced electron correlation enhancement destabilizing the M2 phase our temperature-dependent Raman study supports a small temperature window for this phase. The similarity of the hysteretic behavior of structural and electronic transitions suggests that the structural transitions play key roles in the switching properties of epitaxial VO2 thin films.
中文翻译：
直接测量应变工程VO2薄膜的结构转变路径。
金红石型TiO 2基体上的二氧化钒（VO 2）外延膜提供了一种应变工程化过渡途径和稳定单斜晶（绝缘）M1和金红石（金属）R端相之间的中间相的方法。在这项工作中，我们通过依赖于温度的拉曼显微镜分析调查了同构MgF 2（001）和（110）衬底上沉积的外延VO 2薄膜的结构行为。MgF 2的选择底物清楚地表明，在加热-冷却循环期间，V-V二聚体的伸长伴随V-O键的缩短如何触发中间M2相，温度在70-80°C之间。与先前的应变诱导电子相关性增强使M2相不稳定的说法一致，我们的温度依赖性拉曼研究支持该相的较小温度范围。结构和电子跃迁的磁滞行为的相似性表明，结构跃迁在外延VO 2薄膜的开关特性中起关键作用。
更新日期：2020-09-24
中文翻译：
直接测量应变工程VO2薄膜的结构转变路径。
金红石型TiO 2基体上的二氧化钒（VO 2）外延膜提供了一种应变工程化过渡途径和稳定单斜晶（绝缘）M1和金红石（金属）R端相之间的中间相的方法。在这项工作中，我们通过依赖于温度的拉曼显微镜分析调查了同构MgF 2（001）和（110）衬底上沉积的外延VO 2薄膜的结构行为。MgF 2的选择底物清楚地表明，在加热-冷却循环期间，V-V二聚体的伸长伴随V-O键的缩短如何触发中间M2相，温度在70-80°C之间。与先前的应变诱导电子相关性增强使M2相不稳定的说法一致，我们的温度依赖性拉曼研究支持该相的较小温度范围。结构和电子跃迁的磁滞行为的相似性表明，结构跃迁在外延VO 2薄膜的开关特性中起关键作用。
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