Self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages. In this paper, we report a high performance Cu 2 O/ZnO self-powered photodetector fabricated by using electrochemical deposition. ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu 2 O film to construct type-II band structure. The Cu 2 O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias. Compared with Cu 2 O photoconductive detector, the responsivity of the Cu 2 O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias. It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron–hole pairs, which are provided by the heterojunction. The outstanding comprehensive performances make the Cu 2 O film/ZnO nanowires self-powered photodetector have great potential applications.

中文翻译：

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电化学沉积高性能Cu 2 O薄膜/ ZnO纳米线自供电光电探测器

基于纳米材料的自供电光电探测器由于其各种优势而引起了人们的关注。在本文中，我们报告了通过电化学沉积制备的高性能Cu 2 O / ZnO自供电光电探测器。将生长在铟锡氧化物玻璃上的ZnO纳米线阵列浸入Cu 2 O膜中以构造II型能带结构。Cu 2 O / ZnO光电探测器在596 nm处的响应度为0.288 mA / W，无偏压。与Cu 2 O光电导检测器相比，Cu 2 O / ZnO自供电光电检测器在2 V偏压下的响应度提高了大约两倍。这归因于异质结提供的高功率转换效率和光生电子-空穴对的有效分离。