Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement.

中文翻译：

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光谱范围为 1.5 - 1.6 μm 的应变补偿 AlGaInAs/In 量子阱超辐射发光二极管

研究了基于具有应变补偿量子阱的 AlGaInAs/InP 分离限制双异质结构的超辐射发光二极管。分析了有源区弹性应变对器件输出特性的影响。结果表明，这种超辐射发光二极管的设计允许在单个输出端获得超过 5 mW 的光功率、超过 60 nm 的辐射光谱宽度、高达 30 dB 的输出辐射偏振度。模光纤，并具有进一步改进的巨大潜力。