We report on the first laser operation of ytterbium-doped potassium yttrium double molybdate crystal (Yb:KY(MoO4)2). Single-crystals containing 3 at.% Yb3+-ions were grown by the low temperature gradient Czochralski method. The crystal structure (orthorhombic, sp. gr. D142h – Pbna) was refined with the Rietveld method. Yb:KY(MoO4)2 exhibits a layered structure leading to a strong optical anisotropy and a perfect cleavage along the crystallographic (100) plane. The maximum stimulated-emission cross-section amounts to 3.70×10−20 cm2 at 1008.0 nm with an emission bandwidth of 37 nm (for light polarization E || b). The Stark splitting is determined at 6 K. Continuous-wave laser operation is achieved in a thin Yb:KY(MoO4)2 crystal plate (thickness: 286 µm) under diode pumping. The microchip laser generated a maximum output power of 0.81 W at 1021-1044 nm with a slope efficiency of 76.4% and polarized emission. Yb:KY(MoO4)2 crystal lamellae / plates are attractive for sub-ns passively Q-switched microchip lasers and thin-disk lasers.

中文翻译：

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裂解 Yb:KY(MoO4)2 晶体的光谱学和高效激光操作

我们报告了掺镱钾钇双钼酸盐晶体 (Yb:KY(MoO4)2) 的首次激光操作。含有 3 at.% Yb3+ 离子的单晶通过低温梯度直拉法生长。晶体结构（斜方晶系，sp. gr. D142h – Pbna）用 Rietveld 方法精制。Yb:KY(MoO4)2 表现出层状结构，导致强烈的光学各向异性和沿晶体 (100) 平面的完美解理。最大受激发射截面在 1008.0 nm 处为 3.70×10−20 cm2，发射带宽为 37 nm（对于光偏振 E || b）。Stark 分裂在 6 K 下确定。连续波激光操作是在二极管泵浦下在薄 Yb:KY(MoO4)2 晶体板（厚度：286 µm）中实现的。微芯片激光器产生的最大输出功率为 0。在 1021-1044 nm 处为 81 W，斜率效率为 76.4%，偏振发射。Yb:KY(MoO4)2 晶体薄片/板对亚纳秒被动调Q微芯片激光器和薄盘激光器很有吸引力。