High-birefringence waveguide Bragg gratings for the C-band are fabricated in the Silica-on-Silicon platform with Displacement Talbot Lithography (DTL). Transmission and reflection spectrums of the Bragg wavelength splitting were measured and calculated. The birefringence here is up to 7.919×10−4 to 1.670×10−3, much higher than existing devices via other platforms. We illustrate the principle and advantage of DTL though theoretical analysis and numerical simulation. The birefringence of waveguide Bragg gratings here are customized with their device configuration (i.e., waveguide width and grating etched depth), enabling an effective method to construct scalable Silica-on-Silicon devices for highly linear-polarized external-cavity semiconductor lasers.

中文翻译：

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在具有位移 Talbot 光刻的硅上硅平台上制造的高双折射波导布拉格光栅

用于 C 波段的高双折射波导布拉格光栅是在具有位移 Talbot 光刻 (DTL) 的硅上硅平台中制造的。测量和计算布拉格波长分裂的透射和反射光谱。这里的双折射高达 7.919×10-4 到 1.670×10-3，远高于通过其他平台的现有设备。我们通过理论分析和数值模拟来说明DTL的原理和优势。此处波导布拉格光栅的双折射是根据其器件配置（即波导宽度和光栅蚀刻深度）进行定制的，这使得构建用于高度线性偏振外腔半导体激光器的可扩展硅基硅器件的有效方法成为可能。