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Chalcogenide glass photonic integration for improved 2‐micron optical interconnection
Photonics Research ( IF 6.6 ) Pub Date : 2020-08-21 , DOI: 10.1364/prj.398957
Weihong Shen , Pingyang Zeng , Zelin Yang , Di Xia , Jiangbing Du , Bin Zhang , Ke Xu , Zuyuan He , Zhaohui Li

In this work, on-chip chalcogenide glass photonic integrations with several fundamental photonic building blocks are designed and fabricated based on the As2S3 platform for improved 2 μm optical interconnection, achieving a broadened wavelength bandwidth and improved fabrication tolerance. A 600 nm thick As2S3 strip waveguide has low propagation loss of 1.447 dB/cm at 2 μm. Broadband vertical coupling is realized by a grating coupler with 4.3 dB coupling loss. A Bragg grating filter, power splitter, Mach–Zander interferometer, and mode converter for on-chip mode division multiplexing (MDM) are also reported at 2 μm with reliable performances. Finally, a record high MDM optical interconnection capacity of 3×80 Gbps at 2 μm is experimentally demonstrated based on the proposed As2S3 chip, drawing promising prospects for future photonic integration and high-speed interconnection at the 2 μm waveband.

中文翻译:

用于改进 2 微米光互连的硫属化物玻璃光子集成

在这项工作中,基于 As2S3 平台设计和制造了具有几个基本光子构建块的片上硫属化物玻璃光子集成,以改进 2 μm 光互连,实现更宽的波长带宽和改进的制造公差。600 nm 厚的 As2S3 条形波导在 2 μm 处具有 1.447 dB/cm 的低传播损耗。宽带垂直耦合由耦合损耗为 4.3 dB 的光栅耦合器实现。用于片上模分复用 (MDM) 的布拉格光栅滤波器、功率分配器、马赫-詹德干涉仪和模式转换器也被报道为具有可靠性能的 2 μm。最后,基于所提出的 As2S3 芯片,实验证明了在 2 μm 处达到 3×80 Gbps 的创纪录高 MDM 光互连容量,
更新日期:2020-08-21
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