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Mechanism and Suppression of Physisorbed-Water-Caused Hysteresis in Graphene FET Sensors.
ACS Sensors ( IF 8.2 ) Pub Date : 2020-09-01 , DOI: 10.1021/acssensors.0c01441
Miroslav Bartošík 1, 2, 3 , Jindřich Mach 1, 2 , Jakub Piastek 1, 2 , David Nezval 2 , Martin Konečný 2 , Vojtěch Švarc 1, 2 , Klaus Ensslin 4 , Tomáš Šikola 1, 2
Affiliation  

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.

中文翻译:

石墨烯FET传感器中因水引起的磁滞现象的机理和抑制。

磁滞是场效应晶体管(FET)中的一个问题,通常是由栅极隔离(例如SiO 2)层内部的缺陷和电荷陷阱引起的。这项工作表明,基于石墨烯的FET也表现出滞后现象,这是由于相对湿度水平决定了石墨烯顶部的物理吸附水,这在生物传感器和环境工作传感器中自然会发生。磁滞效应通过物理吸附的水俘获电子来解释,并且显示出可以使用交替的栅极电压的短脉冲来抑制这种磁滞现象。
更新日期:2020-09-25
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