Abstract Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was successfully fabricated by the imprint lithography and plasma etching processes without using a photolithography process. The TFT is provided with two horizontally and vertically crossed electrode lines. In order to isolate the horizontal electrode line on the bottom surface, fine holes were drilled in the top vertical electrode line to separate the bottom electrode line. A 50 × 50 μm2 channel-sized TFT with connecting metal lines was completed easily using one imprint process and continuous etching process in one chamber. The TFT exhibited a linear mobility of 14.5 cm2/Vs, and a current on/off ratio of 2.07 × 105 at the drain voltage of 0.5 V. Since this TFT fabrication method utilizes self-aligned imprint lithography, there is no difficulty in alignment when using photolithography, and it can be utilized as a more complex and fine TFT array fabrication process through process improvement.

中文翻译：

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具有互连金属线的a-IGZO薄膜晶体管的免光刻制造

摘要 通过压印光刻和等离子刻蚀工艺成功制备了非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT），无需使用光刻工艺。TFT具有水平和垂直交叉的两条电极线。为了隔离底面的水平电极线，在顶部垂直电极线处钻出细孔，将底部电极线隔开。使用一个压印工艺和一个腔室中的连续蚀刻工艺，可以轻松完成具有连接金属线的 50 × 50 μm2 通道尺寸 TFT。TFT 的线性迁移率为 14.5 cm2/Vs，漏极电压为 0.5 V 时的电流开/关比为 2.07 × 105。由于这种 TFT 制造方法采用自对准压印光刻，