Abstract The main objective of our study was to develop an electrochemical synthesis method for obtaining Te-doped InSb thin films. The electrodeposition was performed using a pulse mode in a citrate bath containing 0.06 M InCl3, 0.045 M SbCl3 and 0–0.008 M TeO2. Firstly, the optimization of following parameters was carried out: the potential of pulse “off” (Eoff), duration of pulse “off” (toff), and the ratio of time “on” to time “off” (ton/toff). We have confirmed that appropriate selection of electrodeposition conditions allows obtaining a material with a controllable morphology and chemical composition. Based on performed studies, optimal parameters for electrodeposition of thin Te-doped InSb films were selected. In the next stage, the pulse electrodeposition of Te-doped InSb films at previously optimized conditions was conducted from a solution containing different concentrations of the TeO2 precursor. It was demonstrated that adjustment of the TeO2 content in the citrate bath allows controlling the dopant concentration in thin Te-doped InSb films. Such a controllable synthesis creates the opportunity for tuning physicochemical properties of the material. The effect of doping on the crystal structure, phase composition, surface roughness, and optical band gap of thin Te-doped InSb films was discussed in detail.

中文翻译：

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Te掺杂InSb薄膜的合成条件优化及其理化性质的第一性原理研究

摘要 我们研究的主要目的是开发一种电化学合成方法来获得掺铥的 InSb 薄膜。在含有 0.06 M InCl3、0.045 M SbCl3 和 0-0.008 M TeO2 的柠檬酸盐浴中使用脉冲模式进行电沉积。首先对以下参数进行优化：脉冲“关”的电位（Eoff）、脉冲“关”的持续时间（toff）、“开”与“关”时间的比值（ton/toff） . We have confirmed that appropriate selection of electrodeposition conditions allows obtaining a material with a controllable morphology and chemical composition. 基于所进行的研究，选择了用于电沉积 Te 掺杂 InSb 薄膜的最佳参数。在下一阶段，在先前优化的条件下，从含有不同浓度 TeO2 前体的溶液中进行 Te 掺杂 InSb 薄膜的脉冲电沉积。结果表明，调节柠檬酸盐浴中的 TeO2 含量可以控制掺 Te 的 InSb 薄膜中的掺杂剂浓度。这种可控合成为调整材料的物理化学性质创造了机会。详细讨论了掺杂对 Te 掺杂 InSb 薄膜的晶体结构、相组成、表面粗糙度和光学带隙的影响。这种可控合成为调整材料的物理化学性质创造了机会。详细讨论了掺杂对掺 Te 的 InSb 薄膜的晶体结构、相组成、表面粗糙度和光学带隙的影响。这种可控合成为调整材料的物理化学性质创造了机会。详细讨论了掺杂对掺 Te 的 InSb 薄膜的晶体结构、相组成、表面粗糙度和光学带隙的影响。