Abstract

A bipolar nanosecond discharge with a voltage amplitude of one polarity of 15–40 kV and a current amplitude of 50–150 A in a pulse was ignited at an inter-electrode distance of 0.1 cm and the pressure of argon 101 or 202 kPa, at a frequency of the pulse voltage 40–100 Hz. The pulsed electric discharge power was in a range of 5–11 MW, with a plasma energy input of 0.40 and 0.44 J per pulse. Spectroscopic plasma diagnostics showed that the spectral lines of the copper atom in the range 200–230 nm and the spectral lines of the indium atom and Cu⁺ and In⁺ ions in a longer wavelength range of the spectrum are the most intense. The following lines from the spectral range of 300–460 nm can be used to diagnose the deposition of chalcopyrite films in real time: 307.38 nm Cu(I), 329.05 nm Cu(I), 410.17 nm In(I), 451.13 nm In(I). By solving the Boltzmann kinetic equation for the electron energy distribution function, the temperature and the density of electrons, the specific losses of the discharge power on the main electronic processes and the rate constants of the electronic processes depending on the value of the parameter of the ratio of the electric field strength E to the total concentration of Ar atoms and a small admixture of a Cu vapor N (E/N) are simulated. In a discharge in a mixture of copper vapor with argon, the electron temperature increased in a range of 300–110 000 K, with a change in the E/N parameter from 1 to 1800 Td. The electron concentration was in a range of 2.1 × 10²⁰– 2.7 × 10²⁰ m^–3, at a current density (612–765) × 10⁶ A/m² on the electrode surface (at E/N = 1676 Td). Thin films of chalcopyrite were synthesized on substrates of transparent solid dielectrics, which, in a wide spectral range of 200–800 nm, absorb radiation incident of their surface quite effectively. This opens up prospects for their use in photovoltaic devices. It was shown that the smallest transmission of radiation is characteristic of chalcopyrite films synthesized at atmospheric pressure of argon and air.

中文翻译：

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黄铜矿（CuInSe 2）电极之间超应力纳秒脉冲放电等离子体的特性和参数

摘要

在电极间距离为0.1 cm且氩气压力为101或202 kPa的条件下，点燃一个脉冲幅度为15-40 kV的电压且电流幅度为50-150 A的双极纳秒放电。脉冲电压的频率40-100 Hz。脉冲放电功率范围为5-11 MW，每个脉冲的等离子能量输入为0.40和0.44J。光谱等离子体诊断表明，铜原子的光谱线在200–230 nm范围内，铟原子的光谱线与Cu ⁺和In ⁺光谱的较长波长范围内的离子最强。300-460 nm光谱范围内的以下线可用于实时诊断黄铜矿薄膜沉积：307.38 nm Cu（I），329.05 nm Cu（I），410.17 nm In（I），451.13 nm In （一世）。通过求解电子能量分布函数，电子的温度和密度，主要电子过程的放电功率的比损耗以及电子过程的速率常数的玻尔兹曼动力学方程，取决于电子参数的值电场强度E与Ar原子的总浓度之比与Cu蒸气N的少量混合物（E / N）进行模拟。在铜蒸气和氩气的混合气体中放电时，电子温度在300–110 000 K的范围内升高，E / N参数从1变为1800 Td。在电极表面上的电流密度（612-765）×10 ⁶ A / m ^2时，电子浓度在2.1×10 ²⁰ – 2.7×10 ²⁰ m ^–3的范围内（在E / N= 1676 Td）。黄铜矿薄膜是在透明固体电介质的基板上合成的，该基板在200-800 nm的宽光谱范围内可以非常有效地吸收其表面入射的辐射。这为将其用于光伏器件开辟了前景。结果表明，在氩气和空气的大气压下合成的黄铜矿薄膜具有最小的辐射透射特性。