We present the preparation of MnGe coated Si nanowires (NWs) using molecular beam epitaxy. Uniformly dispersed silicon NW surfaces were initially covered by Ge, and then Si/MnGe core/shell NW heterostructures were fabricated by solid phase epitaxial growth. Morphology and the magnetic properties of the Si/MnGe core/shell NWs were investigated. The results of scanning electron microscope and transmission electron microscope revealed that the shell layer of NWs was agglomerated to form clusters, which were mainly comprised of Mn₅Ge₃ phase. Vibrating magnetometer and X-band ferromagnetic resonance measurements indicate that the Si/MnGe core/shell NWs exhibited a slight shape anisotropy along the geometrical wire axis.

我们目前使用分子束外延制备MnGe涂层的Si纳米线（NWs）。均匀分散的硅NW表面首先被Ge覆盖，然后通过固相外延生长制备Si / MnGe核/壳NW异质结构。研究了Si / MnGe核/壳NW的形貌和磁性。扫描电子显微镜和透射电子显微镜的结果表明，NWs的壳层团聚形成簇，簇主要由Mn ₅ Ge ₃相组成。振动磁力计和X波段铁磁共振测量结果表明，Si / MnGe核/壳NW沿金属丝的几何轴线显示出轻微的形状各向异性。