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Non-substituted fused bis-tetracene based thin-film transistor with self-assembled monolayer hybrid dielectrics
Frontiers of Materials Science ( IF 2.7 ) Pub Date : 2020-09-02 , DOI: 10.1007/s11706-020-0518-4
Baolin Zhao , Mikhail Feofanov , Dominik Lungerich , Hyoungwon Park , Tobias Rejek , Judith Wittmann , Marco Sarcletti , Konstantin Amsharov , Marcus Halik

Polycyclic aromatic hydrocarbons with zigzag peripheries are high perspective candidates for organic electronics. However, large fused acenes are still poorly studied due to the tedious synthesis. Herein we report a non-substituted fused bistetracene DBATT (2.3,8.9-dibenzanthanthrene) as the semiconductor on low-voltage-driven organic thin-film transistors. The systematic studies of thin-film growth on various self-assembled monolayer (SAM) modified gate dielectrics and the electrical performances were carried out. The sub-monolayer of the semiconductor film shows larger island domains on the alkyl chain SAM. This device exhibits the hole mobility of 0.011 cm2·V−1·s−1 with a current ratio of IonIIoff above 105.



中文翻译:

具有自组装单层混合电介质的非取代熔融双并四苯系薄膜晶体管

具有锯齿形周边的多环芳烃是有机电子领域的高前景候选者。但是,由于繁琐的合成,对大型并苯并苯的研究仍然很少。在本文中,我们报告了一种非取代的熔融双硬脂酰胺DBATT(2.3,8.9-dibenzanthanthrene)作为低压驱动有机薄膜晶体管上的半导体。对各种自组装单层(SAM)改性栅极电介质上的薄膜生长和电性能进行了系统的研究。半导体膜的亚单层在烷基链SAM上显示出较大的岛结构域。该器件在电流比为I on II off时表现出0.011 cm 2 ·V -1 ·s -1的空穴迁移率10以上5

更新日期:2020-09-02
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