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Defect-assisted photoluminescence in hexagonal boron nitride nanosheets
2D Materials ( IF 4.5 ) Pub Date : 2020-08-31 , DOI: 10.1088/2053-1583/ababf0
Junkai Ren 1 , Luigi Stagi 1 , Carlo Maria Carbonaro 2 , Luca Malfatti 1 , Maria Francesca Casula 3 , Pier Carlo Ricci 2 , Antonio Esau Del Rio Castillo 4 , Francesco Bonaccorso 4 , Laura Calvillo 5 , Gaetano Granozzi 5 , Plinio Innocenzi 1
Affiliation  

The development of functional optoelectronic applications based on hexagonal boron nitride nanosheets ( h -BNNs) relies on controlling the structural defects. The fluorescent emission, in particular, has been observed to depend on vacancies and substitutional defects. In the present work, few-layer h -BNNs have been obtained by sonication-assisted liquid-phase exfoliation of their bulk counterpart. The as-prepared samples exhibit a weak fluorescent emission in the visible range, centred around 400 nm. Tailored defects have been introduced by oxidation in air at different temperatures. A significant increase in the fluorescent emission of the oxidated h -BNNs has been observed with maximum emissive intensity for the samples treated at 300 °C. A further increase in temperatures (>300 °C) determines a quenching of the fluorescence. We investigated, by means of detailed microscopic and spectroscopic analysis, the relationship between the optical properties...

中文翻译:

六方氮化硼纳米片中的缺陷辅助光致发光

基于六方氮化硼纳米片(h -BNNs)的功能光电应用的开发依赖于控制结构缺陷。特别地,已经观察到荧光发射取决于空位和取代缺陷。在目前的工作中,通过声波辅助液相剥离其本体对应物已经获得了几层h -BNN。所制备的样品在可见光范围内以400 nm为中心呈现弱荧光发射。通过在不同温度下在空气中氧化已引入了量身定制的缺陷。对于在300°C处理的样品,在最大发射强度下,氧化的h-BNNs的荧光发射显着增加。温度的进一步升高(> 300°C)决定了荧光的猝灭。我们调查了
更新日期:2020-09-01
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