The dislocation structure around the Vickers indentation on a hydride vapor-phase epitaxy GaN wafer was observed by multi-photon photoluminescence imaging and cross-sectional scanning transmission electron microscopy. Straight dislocation lines parallel to the six equivalent ##IMG## [http://ej.iop.org/images/1347-4065/59/9/091005/jjapabb00cieqn3.gif] {$\left\langle 11\overline{2}0\right\rangle $} directions, i.e. a rosette pattern, were observed in the subsurface. Below the rosette pattern, a flower-like pattern similar to dislocation loops expanded in the six equivalent ##IMG## [http://ej.iop.org/images/1347-4065/59/9/091005/jjapabb00cieqn4.gif] {$\left\langle 11\overline{2}0\right\rangle $} directions. Under the flower-like pattern, an inverted triangular dark area composed of dislocations on pyramidal planes was observed. This structure did not vary with load (20–980 mN) or crack formation. The inverted triangular dark area containe...

中文翻译：

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## IMG ##上的螺丝错位[http://ej.iop.org/images/1347-4065/59/9/091005/toc_jjapabb00cieqn1.gif] {$ \ left \ {1 \ bar {2} 12 \ right \} $} HVPE GaN中的维氏压痕引起的锥面

通过多光子光致发光成像和截面扫描透射电子显微镜观察到氢化物气相外延GaN晶片上维氏压痕周围的位错结构。平行于六个等效## IMG ##的直位错线[http://ej.iop.org/images/1347-4065/59/9/091005/jjapabb00cieqn3.gif] {$ \ left \ langle 11 \ overline {在地下观察到2} 0 \ right \ rangle $}方向，即玫瑰形图案。在玫瑰花结图案下方，类似于位错环的花朵状图案在六个等效的## IMG ## [http://ej.iop.org/images/1347-4065/59/9/091005/jjapabb00cieqn4.gif ] {$ \ left \ langle 11 \ overline {2} 0 \ right \ rangle $}方向。在花状图案下，观察到由锥体平面上的位错组成的倒三角形暗区。这种结构不会随载荷（20–980 mN）或裂纹的形成而变化。倒三角形暗区包含...