During the industrial application of the new phase change memory material carbon-doped Ge 2 Sb 2 Te 5 (GSTC), it is necessary to perform planarization for the confined memory cell structure through the chemical mechanical polishing (CMP) process. The goal of CMP is to acquire a high material removal rate and selectivity while ensuring that the polished surface is free of scratches and corrosion pits. A new acidic slurry added with potassium persulfate (OXONE) as an oxidizer was developed. The acidic slurry added with 5000 ppm OXONE has a amorphous GSTC film material removal rate of 5200 Å min −1 , a high selectivity between GSTC and Si 3 N 4 films of 950:1, and no corrosion-induced pit. In order to clarify the mechanism of GSTC CMP with OXONE, the Energy Dispersive Spectrometer, potentiodynamic polarization curve and X-ray photoelectron spectroscope were adopted to analyze the surface of GSTC. It is found that the chemical ...

中文翻译：

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用于掺杂碳的Ge 2 Sb 2 Te 5膜化学机械平面化的3A新型高选择性酸性浆料

在新型相变存储材料碳掺杂的Ge 2 Sb 2 Te 5（GSTC）的工业应用中，有必要通过化学机械抛光（CMP）工艺对受限的存储单元结构进行平坦化。CMP的目标是获得高的材料去除率和选择性，同时确保抛光的表面没有划痕和腐蚀点。开发了一种新的酸性浆料，其中添加了过硫酸钾（OXONE）作为氧化剂。添加了5000 ppm OXONE的酸性浆料的无定形GSTC膜材料去除速率为5200Åmin -1，GSTC与Si 3 N 4膜之间的高选择性为950：1，并且没有腐蚀引起的凹坑。为了阐明使用OXONE（能量色散光谱仪）的GSTC CMP的机理，用恒电位极化曲线和X射线光电子能谱仪分析了GSTC的表面。发现化学...