The lateral diffusion length ( L h ) of minority carriers in LWIR InAs/GaSb superlattice detectors grown by metalorganic chemical vapour deposition was evaluated. The deeply-etched PNn device exhibits a diffusion-limited behaviour at 80 K, with a dark current density as low as 9.1 × 10 −6 A/cm 2 at −0.1 V and a 50% cut-off of 10.1 μm. In shallow-etched pixels with a common absorber, both the photo-current and the dark current show a size-dependent behaviour. L h deduced from the two methods are 211 and 251 μm, respectively, which are longer than those in superlattice materials grown by molecular beam epitaxy.

中文翻译：

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通过 MOCVD 生长的 InAs/GaSb 超晶格探测器的横向扩散长度评估

评估了通过金属有机化学气相沉积生长的 LWIR InAs/GaSb 超晶格探测器中少数载流子的横向扩散长度 (L h )。深度蚀刻的 PNn 器件在 80 K 下表现出扩散受限行为，在 -0.1 V 下暗电流密度低至 9.1 × 10 -6 A/cm 2，50% 截止值为 10.1 μm。在具有共同吸收体的浅蚀刻像素中，光电流和暗电流都表现出与尺寸相关的行为。两种方法推导出的 L h 分别为 211 和 251 μm，比分子束外延生长的超晶格材料长。