A novel ultrathin barrier AlGaN/GaN hybrid-anode-diode (UTB-HAD) with in-situ Si 3 N 4 -cap passivation is experimentally demonstrated. The forward turn-on voltage ( V on ) of the UTB-HAD is determined by the intrinsic threshold voltage of the two-dimension electron gas (2DEG) channel, which can be precisely controlled by tailoring the as-grown AlGaN-barrier thickness. The typical V on as low as 0.48 V is obtained by using the UTB AlGaN/GaN with a barrier thickness of 4.9 nm. The MOCVD has grown in-situ Si 3 N 4 -cap and the LPCVD-Si 3 N 4 bilayer passivation stack is developed to effectively restore the 2DEG in the UTB AlGaN/GaN heterostructure and simultaneously improve the dynamic characteristics of the diode. The UTB-HAD and the novel passivation scheme are of great potential for power applications.

中文翻译：

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具有 MOCVD 原位 Si3N4 帽和 LPCVD-Si3N4 双层钝化堆栈的超薄势垒 AlGaN/GaN 混合阳极二极管，用于改善动态特性

实验证明了一种具有原位 Si 3 N 4 帽钝化的新型超薄势垒 AlGaN/GaN 混合阳极二极管 (UTB-HAD)。UTB-HAD 的正向开启电压 (Von) 由二维电子气 (2DEG) 通道的本征阈值电压决定，可以通过调整生长的 AlGaN 势垒厚度来精确控制。通过使用势垒厚度为 4.9 nm 的 UTB AlGaN/GaN 获得低至 0.48 V 的典型 V on 。MOCVD 已经原位生长 Si 3 N 4 帽，并且开发了 LPCVD-Si 3 N 4 双层钝化堆栈，以有效恢复 UTB AlGaN/GaN 异质结构中的 2DEG，同时改善二极管的动态特性。UTB-HAD 和新颖的钝化方案在电源应用中具有巨大的潜力。