In this work, we report the modeling and design of a high-speed Ge-based plasmonic detector coupled with a Metal-Insulator-Metal (MIM) plasmonic majority gate. The detector is designed to distinguish between multiple output levels of the integrated majority gate. Through numerical analyses we predict the proposed plasmonic detector has an intrinsic bandwidth beyond $\text{220 GHz}$ at an applied bias of only $\text{100 mV}$. An asymmetric Metal-Semiconductor-Metal (MSM) configuration of the plasmonic detector ensures a dark current of a few nA which results in high sensitivity. The high electric field generated by the electrode asymmetry enables effective separation of the photogenerated carriers resulting in high photocurrent even at few mVs of applied bias. The low capacitance of less than $1fF$ arising from the small detector dimensions results in a high RC-limited bandwidth. Moreover, the narrow plasmonic Ge slot of the photodetector provides a short drift path and fast transit time for carriers. Unlike previously reported plasmonic detectors that use noble metals as electrodes, our proposed detector employs Al and Cu to meet CMOS compatibility requirements and thus can be a potential candidate for high-speed computational systems in industry-level applications. Additionally, the findings presented in the article will be helpful for the future realization of an integrated plasmonic system.

中文翻译：

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超CMOS等离子多数逻辑门等离子探测器的建模与优化

在这项工作中，我们报告了与金属-绝缘体-金属 (MIM) 等离子体多数门耦合的高速 Ge 基等离子体探测器的建模和设计。检测器旨在区分集成多数门的多个输出电平。通过数值分析，我们预测所提出的等离子体探测器的固有带宽超过$\text{220 GHz}$ 在应用偏差仅为 $\text{100 mV}$. 等离子体探测器的非对称金属-半导体-金属 (MSM) 配置确保了几个 nA 的暗电流，从而实现了高灵敏度。电极不对称产生的高电场能够有效分离光生载流子，即使在施加几毫伏的偏压下也能产生高光电流。低电容小于$1FF$由小探测器尺寸引起的 RC 限制带宽较高。此外，光电探测器的窄等离子体 Ge 槽为载流子提供了较短的漂移路径和较快的传输时间。与之前报道的使用贵金属作为电极的等离子体探测器不同，我们提出的探测器采用 Al 和 Cu 来满足 CMOS 兼容性要求，因此可以成为工业级应用中高速计算系统的潜在候选者。此外，文章中提出的发现将有助于未来实现集成等离子体系统。