Designing an efficient emitter design is an important step for achieving a highly efficient TPV conversion process. Wavelength-selective emissivity, spectra match between the emitter and TPV cells, and high thermal stability are three main characteristics that must be considered before implementing the emitter. In this work, an indium tin oxide (ITO)/sapphire emitter structure is investigated for TPV application over the temperature range from 200°C to 1000°C. A 1-µm-thick ITO layer is deposited on a 650-µm-thick sapphire substrate. In addition, 50-nm-thick SiO2 is deposited on top of the ITO to enhance the performance of emitter at high temperatures. High-temperature emissivity and absorptivity measurement of the emitter samples are obtained using FTIR and a Hitachi U-4100 spectrophotometer, respectively. The resultant SiO2/ITO/sapphire/stainless-steel planar emitter structure has selective emission with high emissivity of ∼0.8 in the 1–1.6 µm wavelength regime at 1000°C. This emission range lies at the bandgap edge of silicon TPV cells and thus can be used to harness the true potential for making a low-cost thermophotovoltaic system.

中文翻译：

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用于热光伏选择性发射器的透明平面氧化铟锡

设计高效的发射器设计是实现高效 TPV 转换过程的重要步骤。波长选择性发射率、发射器和 TPV 电池之间的光谱匹配以及高热稳定性是实施发射器之前必须考虑的三个主要特性。在这项工作中，研究了在 200°C 至 1000°C 的温度范围内用于 TPV 应用的氧化铟锡 (ITO)/蓝宝石发射极结构。1 微米厚的 ITO 层沉积在 650 微米厚的蓝宝石衬底上。此外，50 nm 厚的 SiO2 沉积在 ITO 顶部，以提高发射极在高温下的性能。分别使用 FTIR 和 Hitachi U-4100 分光光度计测量发射器样品的高温发射率和吸收率。由此产生的 SiO2/ITO/蓝宝石/不锈钢平面发射器结构具有选择性发射，在 1000°C 下在 1-1.6 µm 波长范围内具有 ~0.8 的高发射率。该发射范围位于硅 TPV 电池的带隙边缘，因此可用于利用制造低成本热光伏系统的真正潜力。