In this paper, the unique features of the reflective semiconductor optical amplifiers (RSOAs) are exploited to numerically simulate the ultrafast performance of an all-optical NOT-AND (NAND) logic gate for the first time using a return-to-zero modulation format at a data rate of 120 Gb/s. A comparison is made between RSOAs and conventional SOAs through studying the dependence of the gate’s quality factor (QF) on the critical operational parameters, including the effects of both amplified spontaneous emission and operating temperature to get more realistic results. The results show that the all-optical NAND logic gate can be executed at 120 Gb/s using the RSOAs scheme with a higher QF than when using conventional SOAs.

中文翻译：

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使用反射式半导体光放大器的 120 Gb/s 全光 NAND 逻辑门

在本文中，利用反射式半导体光放大器 (RSOA) 的独特特性，首次使用归零调制格式对全光非与 (NAND) 逻辑门的超快性能进行了数值模拟。数据速率为 120 Gb/s。通过研究门的品质因数 (QF) 对关键操作参数的依赖性，包括放大的自发辐射和操作温度的影响，对 RSOA 和传统 SOA 进行了比较，以获得更真实的结果。结果表明，与使用传统 SOA 相比，使用具有更高 QF 的 RSOA 方案可以以 120 Gb/s 的速度执行全光 NAND 逻辑门。