Controlling the selectivity of products in CO₂ fixation is essential to obtain desired products using phase engineering. In this study, stable semimetal 1H‐SnS₂ nanosheets are successfully synthesized by hydrogen‐assisted low‐temperature calcination for the first time. Compared with semiconductor 1T‐SnS₂, the 1H‐SnS₂ exhibits ultrahigh CO selectivity with a Faradaic efficiency of 98.2% at −0.8 V (vs reversible hydrogen electrode) and a partial current density of 10.9 mA cm⁻² in the electrocatalytic CO₂ reduction reaction. Theoretical calculations indicate that the *COOH intermediate is more stable on 1H‐SnS₂ surface than 1T‐SnS₂ surface and thus promotes the CO production. This work shows that phase engineering control can be an effective approach to regulate the selectivity of products in CO₂RR of transition metal dichalcogenides.

中文翻译：

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半金属1H‐SnS2可实现将CO2高效电还原为CO

使用相工程技术控制产品在CO ₂固定中的选择性对于获得所需产品至关重要。在这项研究中，首次通过氢辅助低温煅烧成功地合成了稳定的半金属1H-SnS ₂纳米片。与半导体1T-SnS ₂相比，1H-SnS ₂具有超高的CO选择性，在-0.8 V（相对于可逆氢电极）下的法拉第效率为98.2％，在电催化CO _2中的部分电流密度为10.9 mA cm ^-2。还原反应。理论计算表明，* COOH中间体在1H-SnS ₂表面比1T-SnS ₂更稳定表面，从而促进了一氧化碳的产生。这项工作表明，相工程控制可以有效地调节过渡金属二卤化物在CO ₂ RR中产物的选择性。