This paper demonstrates the design strategy in the self-aligned quantum-well InAs MOSFETs with T-shape S/D. A 2-D TCAD simulation is performed based on the experimental data. The effect of air gap between the T-shape metal contacts is taken into account. It is found that the fringing effects induced by the air gap has significant impacts on both DC and RF performances. Further study is carried out based on this TCAD simulation platform. The channel extension region, which is simply considered as part of series resistances, needs to be properly designed to maximize f_T and f_MAX. RF performances can’t be further improved even if the gate length is aggressively scaled down. However, the reduction of contact resistance can improve f_T and f_MAX without any limitations. This contact resistance reduction can be realized by incorporating the additional annealing process in the self-aligned gate-last T-S/D process.

本文演示了具有T形S / D的自对准量子阱InAs MOSFET的设计策略。基于实验数据执行二维TCAD仿真。考虑了T形金属触点之间的气隙影响。发现由气隙引起的边缘效应对DC和RF性能均具有显着影响。基于该TCAD仿真平台进行了进一步的研究。沟道扩展区（被简单地认为是串联电阻的一部分）需要进行适当设计，以使f _T和f _MAX最大化。即使栅极长度大幅缩减，RF性能也无法进一步提高。但是，降低接触电阻可以提高f _T和˚F _MAX没有任何限制。可以通过在自对准后栅极TS / D工艺中加入额外的退火工艺来实现这种接触电阻的降低。