Abstract Pure and aluminum doped-zinc oxide thin films were grown by spray-pyrolysis on glass substrates. The addition of increasing amounts of Al led to significant changes in the microstructure of the films. The texture coefficient of the (002) crystallographic plane was observed to decrease in heavily-doped films. Moreover, films with 10% at. Al showed a rare grain morphology characterized by worm-shaped grains. The presence of Al led to films of lower resistivity when compared to the pure-ZnO film, but the excess of doping agent had an opposed effect. This effect may be due to trap states in the form of ionized impurities and aluminum in interstitial sites. The electrical response of the films to UV light was evaluated, being the undoped films the ones showing the most intense response. The time needed for recovering the original current value after interrupting illumination was also measured and discussed.

中文翻译：

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不同微结构和电学性能的铝掺杂氧化锌透明薄膜的紫外响应

摘要 通过喷雾热解法在玻璃基板上生长纯铝掺杂氧化锌薄膜。添加越来越多的铝导致薄膜微观结构的显着变化。观察到（002）晶面的织构系数在重掺杂薄膜中降低。此外，薄膜含 10% at。Al表现出以蠕虫状颗粒为特征的稀有颗粒形态。与纯 ZnO 薄膜相比，Al 的存在导致薄膜电阻率较低，但过量的掺杂剂会产生相反的效果。这种效应可能是由于间隙位点中离子化杂质和铝形式的陷阱态所致。评估了薄膜对紫外光的电响应，未掺杂的薄膜显示出最强烈的响应。