Abstract The present study explores the consequence of incorporation of sulphur content on the structural, linear, and non-linear optical properties as well as dielectric behaviour of the amorphous chalcogenide glassy materials having chemical composition xS-(1-x) (0.65Se-0.35Te) for x = 0.1, 0.2, and 0.3. The samples have been synthesized through the quenching of the melt technique. X-ray diffraction patterns reveal that some nanocrystallites are superimposed on amorphous glass matrices. Rietveld refinement data validates the presence of Te0.5Se0.5 and Se0.44S0.56 nanophases. Field Emission Scanning Electron Microscopy image confirms the formation of nanocrystallites and amorphous structure. Optical absorbance measurements have been performed, and several optical parameters are evaluated. The obtained bandgap energies are found to increase with the incorporation of S (x). The third-order nonlinear susceptibility and nonlinear refractive index are calculated from the linear parameters using semi-empirical relations. The topological concept has been used to correlate the dependence of mean coordination numbers with some of the obtained parameters. The dielectric constant and dielectric loss also have been studied over a wide range of frequency and temperature. The complex electrical modulus study reveals that the conductivity relaxation process is non-Debye type, whereas, scaled modulus spectra point out the conductivity relaxation process is temperature independent.

中文翻译：

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掺硫硒碲三元玻璃体系的微观结构、光学、物理特性和介电弛豫过程的研究

摘要 本研究探讨了硫含量对化学成分为 xS-(1-x) (0.65Se-0.35) 的非晶硫属化物玻璃材料的结构、线性和非线性光学特性以及介电行为的影响。 Te) 对于 x = 0.1、0.2 和 0.3。样品是通过熔体淬火技术合成的。X 射线衍射图显示一些纳米微晶叠加在无定形玻璃基质上。Rietveld 精修数据验证了 Te0.5Se0.5 和 Se0.44S0.56 纳米相的存在。场发射扫描电子显微镜图像证实了纳米微晶和无定形结构的形成。已经进行了光学吸光度测量，并评估了几个光学参数。发现获得的带隙能量随着 S (x) 的掺入而增加。三阶非线性磁化率和非线性折射率是使用半经验关系从线性参数计算出来的。拓扑概念已被用于将平均配位数的相关性与一些获得的参数相关联。介电常数和介电损耗也已在很宽的频率和温度范围内进行了研究。复电模量研究表明电导弛豫过程是非德拜型的，而缩放模量谱表明电导弛豫过程与温度无关。三阶非线性磁化率和非线性折射率是使用半经验关系从线性参数计算出来的。拓扑概念已被用于将平均配位数的相关性与一些获得的参数相关联。介电常数和介电损耗也已在很宽的频率和温度范围内进行了研究。复电模量研究表明电导弛豫过程是非德拜型的，而缩放模量谱表明电导弛豫过程与温度无关。三阶非线性磁化率和非线性折射率是使用半经验关系从线性参数计算出来的。拓扑概念已被用于将平均配位数的相关性与一些获得的参数相关联。介电常数和介电损耗也已在很宽的频率和温度范围内进行了研究。复电模量研究表明电导弛豫过程是非德拜型的，而缩放模量谱表明电导弛豫过程与温度无关。