This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

中文翻译：

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在硅上外延生长的1.3 µm被动锁模量子点激光器：增益特性和光反馈稳定性

这项工作报告了对在硅上外延生长的InAs / InGaAs被动锁模量子点（QD）激光器中的光反馈的研究。在稳定谐振的光反馈条件下，实验表明，无论施加在可饱和吸收器（SA）上的偏置电压是多少，射频线宽都会变窄。另一方面，器件的有效线宽增强因子随着SA上的反向偏置电压而增加，因此可以观察到，这种增加会影响锁模动态和器件在光反馈下的稳定性。