Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3–5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in −2 device density can be achieved either by direct templating or coupled ...

中文翻译：

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用于亚10纳米制程的嵌段共聚物的定向自组装

定向自组装（DSA）成为一种最有希望的新型图形化技术，用于单位数字化小型化和下一代光刻。DSA通过分子组装来实现高分辨率图案化，从而避免了常规光刻技术的衍射极限。最近，《国际设备和系统路线图》将DSA列为制造3–5 nm技术节点设备的先进光刻技术之一。DSA可以与其他光刻技术结合使用，例如极紫外（EUV）和193 nm浸入（193i），以进一步提高图案分辨率和器件密度。到目前为止，DSA已展示出其制造纳米级器件（如鳍式场效应晶体管和位图介质，提供各种配置以实现高密度集成和低成本制造。可以通过直接模板化或耦合...实现超过1 T in -2的器件密度。