Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.

基于扫描探针纳米光刻（SPL）的具有成本效益的图案化技术在电子和光学纳米器件制造以及其他纳米技术应用中具有潜力。SPL的基本优点之一是使用相同探针进行图案形成和成像的能力。这是通过自感应和自驱动悬臂（也称为“主动”悬臂）实现的。在这里，我们使用有源悬臂，通过对分子抗蚀剂薄膜进行低能量（<100 eV）电子曝光，展示了实现一位数纳米级图案形成的新颖途径。通过将电子能量调整为与光刻相关的化学抗蚀剂转换，可以将相互作用空间高度定位。这种方法可以更好地控制空间受限的光刻技术，并提高灵敏度。我们发现，在低电子能量下，在环境条件下的暴露需要每个单个杯芳烃分子大约10个电子才能引发交联事件。灵敏度是30 keV时经典电子束曝光的80倍。通过在环境条件下进行电曝光过程，提出了一种基于抗蚀剂材料直接烧蚀（正色调）的新型光刻反应方案。