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Direct-writing of organic field-effect transistors on plastic achieving 22 MHz transition frequency
Flexible and Printed Electronics ( IF 2.8 ) Pub Date : 2020-08-06 , DOI: 10.1088/2058-8585/aba3af
Bianca Passarella 1, 2 , Alberto D Scaccabarozzi 1 , Michele Giorgio 1, 2 , Andrea Perinot 1 , Sara Marina Barbier 3 , Jaime Martn 3, 4 , Mario Caironi 1
Affiliation  

Organic field effect transistors are considered among the key enablers of flexible, wearable, lightweight and portable electronics. The possibility to fabricate polymer-based devices from solution with high throughput processes makes organic electronics suitable for low cost mass-production of new and diverse applications. Nevertheless, the investigation of the dynamic behaviour of these devices, i.e. their operational frequency, is still limited and the reported operational speed remains low, especially on flexible substrates, limiting their applicability in many circuitry applications. In this work, we report downscaled p-type polymer field effect transistors (FETs), fabricated on both rigid and flexible polymer substrates, by a combination of coating and direct-writing techniques, achieving radio-frequency operation. FETs with the shortest channel of 1.2 µ m can operate up to 22 MHz at a relatively low bias voltage of −12 V, as measured by scattering parameters. ...

中文翻译:

在塑料上直接写入有机场效应晶体管,实现22 MHz的转换频率

有机场效应晶体管被认为是柔性,可穿戴,轻便和便携式电子产品的关键推动因素。由具有高通量工艺的溶液制造基于聚合物的器件的可能性使有机电子产品适合于低成本大量生产新的和多样化的应用。然而,对这些设备的动态行为,即它们的工作频率的研究仍然是有限的,并且报告的工作速度仍然很低,特别是在柔性基板上,限制了它们在许多电路应用中的适用性。在这项工作中,我们报告了通过结合涂层和直接写入技术在刚性和柔性聚合物基板上制造的缩小尺寸的p型聚合物场效应晶体管(FET),实现了射频操作。根据散射参数测得,最短沟道为1.2 µm的FET可以在相对较低的-12V偏置电压下工作至22MHz。...
更新日期:2020-08-31
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