Degradation of metal-insulator-semiconductor (MIS) capacitors of gold/Parylene-C/Pentacene under constant voltage stress (CVS) was investigated to explore the electrical stability and reliability of Parylene C as a gate dielectric in flexible electronics. A stress voltage of fixed magnitude as high as 20 V, both negative and positive in polarity, was applied to each MIS capacitor at room temperature for a fixed duration as long as 10 s. The CVS effects on the capacitance-voltage curve-shift, the time-dependent leakage current and the time-dependent dielectric breakdown were measured and analyzed. CVS is observed to induce charge in Parylene-C and its interfaces with gold and Pentacene. The net induced charge is positive and negative for, respectively, negative and positive gate bias polarity during CVS. The magnitude of the charge accumulated following positive gate CVS is significantly higher than that following negative gate bias CVS in the range of 4 to 25 nC cm −2 ....

中文翻译：

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恒压应力下金/聚对二甲苯-C /并五苯电容器的电荷累积和漏电流

研究了金/聚对二甲苯-C /并五苯在恒定电压应力（CVS）下的金属-绝缘体-半导体（MIS）电容器的降解，以探索聚对二甲苯C作为柔性电子中的栅极电介质的电稳定性和可靠性。在室温下，对每个MIS电容器施加高达20 V（正负极性）的固定大小的应力电压，持续10 s的固定持续时间。测量并分析了CVS对电容-电压曲线位移，随时间变化的泄漏电流和随时间变化的介电击穿的影响。观察到CVS在Parylene-C及其与金和并五苯的界面中感应出电荷。净感应电荷在CVS期间分别为负和正栅极偏置极性，为正和负。