Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin–orbit coupling, the quantum confinement, and surface effect. It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h : from a topological semimetal ( h > 7.8 nm) to a topological insulator (7.8 nm > h > 2.7 nm), then a quantum spin Hall (QSH) phase (2.7 nm > h > 1.0 nm) and a topological trivial semiconductor ( h > 1.0 nm). Here, we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite (HOPG) substrate and the controllable thermal desorption to achieve their specific thickness. The morphology, thickness, atomic structure, and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy (SE...

中文翻译：

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HOPG上锑纳米膜的外延生长和热解吸以控制膜厚

V族元素纳米膜由于其强大的自旋-轨道耦合，量子限制和表面效应而被预测会表现出有趣的物理性质，如非平凡的拓扑性质。据报道，超薄Sb纳米膜可以经历一系列的拓扑转变，这是膜厚度h的函数：从拓扑半金属（h> 7.8 nm）到拓扑绝缘体（7.8 nm> h> 2.7 nm），然后是量子自旋霍尔（QSH）相（2.7 nm> h> 1.0 nm）和拓扑琐碎的半导体（h> 1.0 nm）。在这里，我们报告了对Sb纳米膜在高取向热解石墨（HOPG）衬底上外延生长和可控热解吸以达到其特定厚度的全面研究。形态，厚度，原子结构，