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Micro-Heterogeneous Annihilation Dynamics of Self-Trapped Excitons in Hematite Single Crystals.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-08-31 , DOI: 10.1021/acs.jpclett.0c02330 Hongyan Liao 1 , Yunyan Fan 1 , Yumei Lin 1 , Kang Wang 1 , Renfu Li 2 , Xueyuan Chen 2 , Kelvin H L Zhang 1 , Ye Yang 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-08-31 , DOI: 10.1021/acs.jpclett.0c02330 Hongyan Liao 1 , Yunyan Fan 1 , Yumei Lin 1 , Kang Wang 1 , Renfu Li 2 , Xueyuan Chen 2 , Kelvin H L Zhang 1 , Ye Yang 1
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The Auger recombination in bulk semiconductors can quickly depopulate the charge carriers in a nonradiative way, which, fortunately, only has a detrimental impact on optoelectronic device performance under the condition of high carrier density because the restriction arising from concurrent momentum and energy conservation limits the Auger rate. Here, we surprisingly observed enhanced Auger recombination in an α-Fe2O3 single crystal, a wide bandgap semiconductor with low carrier mobility. The Auger process was ascribed to the Coulombically coupled self-trapped excitons (STEs), and the relaxation of momentum conservation due to the strong spatial localization of these STEs should account for the enhancement. The STE-density dependent kinetics suggested that the strong polaronic effect could cause a micro-heterogeneous distribution of STEs in a high-quality bulk single crystal, which also gave rise to the micro-heterogeneous annihilation dynamics, and a stochastic recombination model was developed and successfully described the STE annihilation dynamics.
中文翻译：
赤铁矿单晶中自陷激子的微非均相An灭动力学。
体半导体中的俄歇复合可通过非辐射方式使载流子迅速消失，幸运的是，在高载流子密度的情况下，这仅对光电器件的性能产生有害影响，因为同时存在的动量和能量守恒引起的限制限制了俄歇率。在这里，我们令人惊讶地观察增强俄歇复合在的α-Fe 2 ö 3单晶，低载流子迁移率的宽带隙半导体。俄歇过程归因于库仑耦合的自陷激子（STE），并且由于这些STE的强烈空间局限性而导致的动量守恒松弛应该是增强的原因。依赖于STE的动力学表明，强极化作用可能导致STE在高质量块状单晶中发生微观非均质分布，从而引起微观非均质an灭动力学，并建立了随机重组模型并成功地描述了STE ni灭的动力学。
更新日期：2020-09-18
中文翻译：
赤铁矿单晶中自陷激子的微非均相An灭动力学。
体半导体中的俄歇复合可通过非辐射方式使载流子迅速消失，幸运的是，在高载流子密度的情况下，这仅对光电器件的性能产生有害影响，因为同时存在的动量和能量守恒引起的限制限制了俄歇率。在这里，我们令人惊讶地观察增强俄歇复合在的α-Fe 2 ö 3单晶，低载流子迁移率的宽带隙半导体。俄歇过程归因于库仑耦合的自陷激子（STE），并且由于这些STE的强烈空间局限性而导致的动量守恒松弛应该是增强的原因。依赖于STE的动力学表明，强极化作用可能导致STE在高质量块状单晶中发生微观非均质分布，从而引起微观非均质an灭动力学，并建立了随机重组模型并成功地描述了STE ni灭的动力学。
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