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Chemical vapor deposition synthesized monolayer MoS2 for Q-switching pulse generation in the 2 µm spectral region
Optical Materials Express ( IF 2.8 ) Pub Date : 2020-08-31
Jingcheng Shang, Tianli Feng, Shengzhi Zhao, Tao Li, Jie Ma, Xiaomin Xu, Norbert Koch, and Jia Zhao

We demonstrate a monolayer MoS2-based saturable absorber (SA) synthesized by chemical vapor deposition (CVD). The as-grown SA has high spatial homogeneity and shows excellent saturable absorption properties in the 2 µm wavelength region. A higher modulation depth of 21.3% and lower saturation intensity of 0.47 MW/cm2 are achieved compared with those of other documented MoS2 SAs to date. When applying the MoS2 SA to a Tm:YAG ceramic laser, we observe a Q-switched pulse train with a shortest pulse duration of 388.0 ns under a pulse repetition rate of 82 kHz, which corresponds to a single pulse energy of 5.4 uJ and a peak power of 14 W. We believe that CVD constitutes an effective method towards high-quality MoS2 saturable absorbers that possess remarkable application potential in the 2 µm wavelength region.

中文翻译:

化学气相沉积合成单层MoS 2,用于在2 µm光谱范围内产生Q开关脉冲

我们演示了通过化学气相沉积(CVD)合成的单层基于MoS 2的可饱和吸收剂(SA)。刚生长的SA具有较高的空间均匀性,并且在2 µm波长范围内显示出出色的饱和吸收特性。与迄今为止其他文献记载的MoS 2 SA相比,调制深度达到21.3%,饱和强度降低至0.47 MW / cm 2。当将MoS 2 SA应用于Tm:YAG陶瓷激光器时,我们观察到Q开关脉冲序列,其最短脉冲持续时间为388.0 ns,脉冲重复频率为82 kHz,对应于5.4 uJ的单脉冲能量和峰值功率为14W。我们认为CVD是实现高质量MoS 2的有效方法 在2 µm波长范围内具有显着应用潜力的可饱和吸收体。
更新日期:2020-08-31
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