We demonstrate a monolayer MoS₂-based saturable absorber (SA) synthesized by chemical vapor deposition (CVD). The as-grown SA has high spatial homogeneity and shows excellent saturable absorption properties in the 2 µm wavelength region. A higher modulation depth of 21.3% and lower saturation intensity of 0.47 MW/cm² are achieved compared with those of other documented MoS₂ SAs to date. When applying the MoS₂ SA to a Tm:YAG ceramic laser, we observe a Q-switched pulse train with a shortest pulse duration of 388.0 ns under a pulse repetition rate of 82 kHz, which corresponds to a single pulse energy of 5.4 uJ and a peak power of 14 W. We believe that CVD constitutes an effective method towards high-quality MoS₂ saturable absorbers that possess remarkable application potential in the 2 µm wavelength region.

中文翻译：

---

化学气相沉积合成单层MoS _2，用于在2 µm光谱范围内产生Q开关脉冲

我们演示了通过化学气相沉积（CVD）合成的单层基于MoS ₂的可饱和吸收剂（SA）。刚生长的SA具有较高的空间均匀性，并且在2 µm波长范围内显示出出色的饱和吸收特性。与迄今为止其他文献记载的MoS ₂ SA相比，调制深度达到21.3％，饱和强度降低至0.47 MW / cm ²。当将MoS ₂ SA应用于Tm：YAG陶瓷激光器时，我们观察到Q开关脉冲序列，其最短脉冲持续时间为388.0 ns，脉冲重复频率为82 kHz，对应于5.4 uJ的单脉冲能量和峰值功率为14W。我们认为CVD是实现高质量MoS ₂的有效方法 在2 µm波长范围内具有显着应用潜力的可饱和吸收体。