We report on the functional capabilities of our field emission (FE) measurement systems. The samples are prepared and inserted under clean room conditions and can be precisely xyz-positioned, heat-treated, and investigated in different vacuum environments and temperatures. The FE scanning microscope is a unique microscope being used for the localization of FE sites with high lateral resolution by means of extraction voltage U(x, y) or emission current I(x, y) maps over the cathode area of 25 × 25 mm2 and measuring the FE properties of localized emission sites or individual emitters. In contrast, the integral measurement system with the luminescent screen provides real-time integral information about the distribution of emission sites over the whole cathode during long- and short-term current stability measurements, thus allowing us to investigate the properties of various materials and their applications. Commissioning results with the upgraded systems using a silicon emitter array and a point-type graphene emitter will be given to demonstrate that both FE measurement techniques are very useful for an improved understanding and tailoring of materials for applications. The results showed that point-type graphene emitters are more preferable for practical applications. Using simulation software, a suitable triode configuration for point emitters was designed, and a current transmission ratio of ∼100% was obtained. The FE current stability of graphene emitters at pressures >10-3 Pa can be improved by heating the cathode at 100 °C-300 °C for 1 min-30 min. Finally, point-type graphene film emitters were used for transmission-type x-ray sources, and their applications in imaging and fluorescence spectroscopy are presented.

中文翻译：

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现代冷阴极材料研究的先进场发射测量技术及其在透射型 X 射线源中的应用

我们报告了我们的场发射 (FE) 测量系统的功能。样品在洁净室条件下制备和插入，可以在不同的真空环境和温度下进行精确的 xyz 定位、热处理和研究。FE 扫描显微镜是一种独特的显微镜，用于通过提取电压 U(x, y) 或发射电流 I(x, y) 在 25 × 25 mm2 的阴极区域上定位具有高横向分辨率的 FE 位点测量局部发射点或单个发射器的 FE 特性。相比之下，带有荧光屏的积分测量系统在长期和短期电流稳定性测量期间提供有关整个阴极上发射位置分布的实时积分信息，从而使我们能够研究各种材料的特性及其应用。将给出使用硅发射器阵列和点型石墨烯发射器的升级系统的调试结果，以证明这两种 FE 测量技术对于改进对应用材料的理解和定制非常有用。结果表明，点型石墨烯发射器更适合实际应用。使用仿真软件，设计了适合点发射器的三极管配置，并获得了约 100% 的电流传输率。通过将阴极在 100 °C-300 °C 下加热 1 min-30 min，可以提高压力 >10-3 Pa 下石墨烯发射器的 FE 电流稳定性。最后，点型石墨烯薄膜发射器用于透射型X射线源，