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Growth and Characterization of Radiation Sensors Based on Single Crystals of Hybrid Metal–Organic Methylammonium Lead Bromide and Iodide Perovskite
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-08-31 , DOI: 10.1002/crat.202000112 Valeria Murgulov 1 , Michael Daub 1, 2 , Harald Hillebrecht 1, 2 , Michael Fiederle 1 , Jan Franc 3 , Václav Dědič 3
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-08-31 , DOI: 10.1002/crat.202000112 Valeria Murgulov 1 , Michael Daub 1, 2 , Harald Hillebrecht 1, 2 , Michael Fiederle 1 , Jan Franc 3 , Václav Dědič 3
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The inverse temperature (T)‐dependent methods yield single crystals of methylammonium lead halide perovskite with strained lattices. In contrast, the antisolvent diffusion method (antisolvent‐vapor crystallization (AVC)) produces unstrained MAPbBr3 crystals with more uniform growth features and lower density of defects. The powder X‐ray diffraction (XRD) measurements confirm the cubic and the tetragonal structure of the MAPbBr3 and the MAPbI3 samples, respectively. The XRD pole figure measurements (MAPbBr3) reveal a roughly parallel dominant (100) lattice plane to the sample surface. An optimal crystal growth combines growth of a seed on an oriented substrate by the AVC method followed by either the AVC or a T‐dependent method. The estimated resistivity ρ and the density of trap state ntrap values for the MAPbI3 samples are 107 Ωcm and 1010 cm−3, respectively. The X‐ray detection test reveals promising electrical properties of the MAPbI3 material. Results from the Hall measurements in van der Pauw geometry for the MAPbBr3 samples agree with those in the literature: the charge‐carrier concentration of 109−1010 cm−3 and the mobility of 7–289 cm2 V−1 s−1, ntrap of 109−1010 cm−3, and ρ of 107–108 Ωcm. These electrical parameters indicate that the MAPbBr3 samples satisfy requirements for radiation sensors.
中文翻译：
基于金属-有机甲基铵溴化铅和碘化物钙钛矿混合晶体的辐射传感器的生长和表征
逆温度（T）依赖性方法可产生具有应变晶格的甲基铵卤化铅钙钛矿单晶。相比之下，反溶剂扩散法（反溶剂汽化结晶（AVC））产生的未应变MAPbBr 3晶体具有更均匀的生长特征和更低的缺陷密度。粉末X射线衍射（XRD）测量分别确认了MAPbBr 3和MAPbI 3样品的立方和四方结构。XRD极图测量（MAPbBr 3）揭示了一个与样品表面大致平行的主（100）晶格平面。最佳的晶体生长方法是通过AVC方法，然后是AVC或T依赖方法，结合晶种在定向衬底上的生长。所估计的电阻率ρ和陷阱态密度Ñ陷阱为MAPbI值3的样品是10 7 Ωcm以下和10 10厘米-3，分别。X射线检测测试表明MAPbI 3材料具有良好的电性能。MAPbBr 3样品的范德堡几何学中霍尔测量结果与文献一致：电荷-载流子浓度为10 9 -1010厘米-3和7-289厘米的迁移率2 V -1 小号-1，Ñ陷阱的10 9 -10 10厘米-3，和10的ρ 7 -10 8 Ωcm以下。这些电参数表明MAPbBr 3样品满足辐射传感器的要求。
更新日期：2020-08-31
中文翻译：
基于金属-有机甲基铵溴化铅和碘化物钙钛矿混合晶体的辐射传感器的生长和表征
逆温度（T）依赖性方法可产生具有应变晶格的甲基铵卤化铅钙钛矿单晶。相比之下，反溶剂扩散法（反溶剂汽化结晶（AVC））产生的未应变MAPbBr 3晶体具有更均匀的生长特征和更低的缺陷密度。粉末X射线衍射（XRD）测量分别确认了MAPbBr 3和MAPbI 3样品的立方和四方结构。XRD极图测量（MAPbBr 3）揭示了一个与样品表面大致平行的主（100）晶格平面。最佳的晶体生长方法是通过AVC方法，然后是AVC或T依赖方法，结合晶种在定向衬底上的生长。所估计的电阻率ρ和陷阱态密度Ñ陷阱为MAPbI值3的样品是10 7 Ωcm以下和10 10厘米-3，分别。X射线检测测试表明MAPbI 3材料具有良好的电性能。MAPbBr 3样品的范德堡几何学中霍尔测量结果与文献一致：电荷-载流子浓度为10 9 -1010厘米-3和7-289厘米的迁移率2 V -1 小号-1，Ñ陷阱的10 9 -10 10厘米-3，和10的ρ 7 -10 8 Ωcm以下。这些电参数表明MAPbBr 3样品满足辐射传感器的要求。
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