An ultrathin (<~0.5 nm) ZnS interfacial passivation layer (IPL) was produced by atomic layer deposition in order to improve the performance of CdS quantum-dot (QD) sensitized solar cells. The mutable role of the top ZnS IPL, deposited after QD sensitization, enhanced light absorbance by acting as an anti-reflective coating resulting in increased photocurrent. The bottom ZnS IPL deposited on the TiO₂ photoanode before QD sensitization led to a uniform distribution of smaller-sized QD microaggregates by modification of the surface energy of TiO₂, which improved the photo-generated charge carrier injection from QD to TiO₂. Furthermore, both ZnS IPLs have roles as the recombination barrier layer. Consequently, the photoconversion efficiency was enhanced by approximately 15% and 30% in cells with top and bottom ZnS IPLs, respectively.

为了提高CdS量子点（QD）敏化太阳能电池的性能，通过原子层沉积生产了超薄（<〜0.5 nm）ZnS界面钝化层（IPL）。QD敏化后沉积的顶部ZnS IPL的可变作用通过充当抗反射涂层而增加了光吸收，从而增强了光吸收。QD敏化之前沉积在TiO ₂光电阳极上的底部ZnS IPL通过改变TiO ₂的表面能导致较小尺寸的QD微聚集体均匀分布，从而改善了从QD向TiO ₂的光生载流子注入。此外，两个ZnS IPL都具有重组阻挡层的作用。因此，在具有顶部和底部ZnS IPL的电池中，光转换效率分别提高了约15％和30％。