Abstract—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3С-SiC/Si(111) templates with a diameter of 100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω‑geometry) values of about 1.4° were obtained.

中文翻译：

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3C-SiC / Si（111）轴上和轴外4°位错取向的分子束外延形成AlN薄层的奇异性

摘要—在本文中，我们研究了在恒定的生长温度和恒定的氮原子流量下，在3С-SiC/ Si（111）模板上AlN外延层在各种铝原子通量值下的生长特性。使用原子力显微镜方法研究所得结构的形态。最小粗糙度是在轴上模板上以150 nm / h的增长率和在轴外模板上以90 nm / h的增长率实现的。在直径为100 mm的3С-SiC/ Si（111）模板上获得了均方根粗糙度小于3 nm的六方AlN外延层，其中没有晶粒结构。获得FWHM（ω几何）值约为1.4°的单晶AlN（0002）层。