We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

中文翻译：

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InGaZnO薄膜中霍尔偏移电压探测的导带边缘能量分布。

我们测量并分析了InGaZnO薄膜晶体管中的霍尔失调电压。发现霍尔偏移电压随着电子密度的增加而单调降低。我们将偏移电压的大小归因于探测点之间的纵向距离中的未对准，并且将电子密度归因于二维电子系统的费米能量，这已通过霍尔电压与垂直磁场的重合得到了验证。倾斜的磁场。从这些结果，我们从霍尔偏移电压得出的组合导带边缘能量分布图，其中三个阈值电压不同的样品的电子密度变化。所提取的组合导带边缘在十分之几微米的纵向距离上变化了几十meV。