Abstract The new dimension of electronics, ‘spintronics,’ offers an improvement in the storage and information processing of devices compared to conventional charged electronics. Semiconductors are more suitable to use as a barrier because they have a long spin-life time and diffusion length in several orders of magnitude compared to metals and insulators. Silicon is a better candidate, which has a better lifetime and range of transport, and the integration becomes more comfortable with conventional electronics. An additional degree of freedom can be achieved by using multiferroic materials, which offer four-state memory, controlled by electrical and magnetic fields. In this work, we demonstrated magnetoresistance through a silicon barrier in a Bi2FeNiO6/Si/Bi2FeNiO6 magnetic tunnel junction (MTJ) system. Bi2FeNiO6 (BFNO) is a double perovskite multiferroic material that acts as a ferromagnetic (FM) electrode. This device was not tested for its four-state resistance, as we focused on spin transport through the silicon barrier. We successfully showed the existence of tunneling magnetoresistance (TMR), varying from 0.2% to 1.8% at different temperatures. Results are promising to use silicon-based magnetic tunnel junctions for spintronics devices.

中文翻译：

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使用基于双钙钛矿的磁性隧道结穿过硅的自旋传输

摘要 电子学的新维度“自旋电子学”与传统的带电电子学相比，改进了设备的存储和信息处理。半导体更适合用作阻挡层，因为与金属和绝缘体相比，它们具有较长的自旋寿命和几个数量级的扩散长度。硅是更好的候选者，它具有更好的寿命和传输范围，并且与传统电子产品的集成变得更加舒适。通过使用多铁性材料可以实现额外的自由度，该材料提供由电场和磁场控制的四态记忆。在这项工作中，我们通过 Bi2FeNiO6/Si/Bi2FeNiO6 磁性隧道结 (MTJ) 系统中的硅势垒证明了磁阻。Bi2FeNiO6 (BFNO) 是一种双钙钛矿多铁性材料，可用作铁磁 (FM) 电极。由于我们专注于通过硅势垒的自旋传输，因此未测试该器件的四态电阻。我们成功地证明了隧道磁阻 (TMR) 的存在，在不同温度下从 0.2% 到 1.8% 不等。结果有望将硅基磁性隧道结用于自旋电子器件。