Performance of biomedical analog circuits vitiates due to non-linear V-R characteristics of Pseudo-resistor (PR) structure, their excess dependency over Process Voltage Temperature (PVT) and common mode variations. In this paper, Incremental Resistance (IR) expressions, V-R curves and statistical results for wider PVT variations for diverse categories of non-tunable and tunable PR structures have been presented. The results obtained using 0.18 μm standard CMOS process with BSIM3V3 device models show that Dynamic Threshold Metal Oxide Semiconductor (DTMOS) technique involving symmetrical biasing for bulk and gate voltages for MOS devices is capable to emulate high nominal value (R_{YX, N}) of IR of the order of 1.95 TΩ over a wider voltage swing of −1 V to 1 V with an area consumption of 60 μm². Statistical results obtained after performing Monte Carlo Simulations (MCS) with 100 runs for the verification of robustness against PVT variations for this structure shows the value of mean (μ), standard deviation (σ) and Coefficient of variance (CV = σ/μ) as 1.918 TΩ, 100.6 GΩ and 0.052 respectively. Results for a variety of other PR structures reported in this paper can be useful for their possible deployment in circuit applications like neural signal recording and low current sensing etc.

由于伪电阻（PR）结构的非线性VR特性，它们对过程电压温度（PVT）的过度依赖性以及共模变化，生物医学模拟电路的性能会降低。在本文中，针对不同种类的不可调节和可调节PR结构，提出了增量阻力（IR）表达式，VR曲线和更广泛的PVT变化的统计结果。使用0.18μm标准CMOS工艺和BSIM3V3器件模型获得的结果表明，动态阈值金属氧化物半导体（DTMOS）技术涉及对MOS器件的体电压和栅极电压进行对称偏置，能够模拟IR的高标称值（R _YX，N） 1.95TΩ超过-1V的更宽的电压摆幅为1伏，60微米的面积消耗的顺序的²。在执行100次运行的蒙特卡罗模拟（MCS）以验证针对该结构的PVT变化的鲁棒性后获得的统计结果显示了平均值（μ），标准偏差（σ）和方差系数（CV =σ/μ）分别为1.918TΩ，100.6GΩ和0.052。本文报道的各种其他PR结构的结果对于将其部署在诸如神经信号记录和低电流感测等电路应用中可能很有用。