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Evidence for a Light‐Induced Degradation Mechanism at Elevated Temperatures in Commercial N‐Type Silicon Heterojunction Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2020-08-29 , DOI: 10.1002/solr.202000214 Brendan Wright 1 , Chukwuka Madumelu 1 , Anastasia Soeriyadi 1 , Matthew Wright 1 , Brett Hallam 1
Solar RRL ( IF 6.0 ) Pub Date : 2020-08-29 , DOI: 10.1002/solr.202000214 Brendan Wright 1 , Chukwuka Madumelu 1 , Anastasia Soeriyadi 1 , Matthew Wright 1 , Brett Hallam 1
Affiliation
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The response of commercial n‐type silicon heterojunction (SHJ) solar cells to illuminated annealing at temperatures between 75 and 180 °C is reported on. Although a slight increase in efficiency of 0.1% absolute occurs at 75 °C under 1 sun illumination after 20 h, annealing at higher temperatures (85–180 °C) results in significant degradation in cell performance, and only occurs in the presence of illumination. At 160 °C, a loss in η up to 1% absolute is observed under 1 sun light soaking (LS) in as little as 2 min. Further illuminated annealing leads to a subsequent partial or full recovery of cell performance. At 160 °C, after an initial VOC degradation exceeding 10 mV within 3 min, a complete recovery is obtained after 60 min of illuminated annealing. The results indicate the potential presence of a light‐induced degradation mechanism in n‐type SHJ cells, suggesting care must be taken when using LS to improve efficiency. In addition, significant variability in the maximum extent of degradation indicates a high degree of cell‐to‐cell variation in expression of this degradation mechanism. The exact nature of the underlying defect mechanism(s) governing degradation and recovery dynamics remains uncertain and requires further studies.
中文翻译：
商用N型硅异质结太阳能电池在高温下光诱导降解机理的证据
报告了商用n型硅异质结（SHJ）太阳能电池在75至180°C的温度下对照明退火的响应。尽管在20小时后1个阳光照射下在75°C下会发生0.1％绝对效率的轻微增加，但是在较高温度（85–180°C）下退火会导致电池性能显着降低，并且仅在有光照的情况下发生。在160°C下，在1分钟的日光浸泡（LS）下，只需2分钟即可观察到η的绝对值损失高达1％。进一步的照明退火会导致电池性能随后部分或全部恢复。初始V OC后在160°C下如果在3分钟内降解超过10 mV，则在经过60分钟的光照退火后即可完全恢复。结果表明，n型SHJ细胞中可能存在光诱导降解机制，这表明使用LS提高效率时必须格外小心。此外，最大降解程度的显着变化表明这种降解机制表达的细胞间差异很大。控制降解和恢复动力学的潜在缺陷机制的确切性质仍不确定，需要进一步研究。
更新日期：2020-11-06
中文翻译：
商用N型硅异质结太阳能电池在高温下光诱导降解机理的证据
报告了商用n型硅异质结（SHJ）太阳能电池在75至180°C的温度下对照明退火的响应。尽管在20小时后1个阳光照射下在75°C下会发生0.1％绝对效率的轻微增加，但是在较高温度（85–180°C）下退火会导致电池性能显着降低，并且仅在有光照的情况下发生。在160°C下，在1分钟的日光浸泡（LS）下，只需2分钟即可观察到η的绝对值损失高达1％。进一步的照明退火会导致电池性能随后部分或全部恢复。初始V OC后在160°C下如果在3分钟内降解超过10 mV，则在经过60分钟的光照退火后即可完全恢复。结果表明，n型SHJ细胞中可能存在光诱导降解机制，这表明使用LS提高效率时必须格外小心。此外，最大降解程度的显着变化表明这种降解机制表达的细胞间差异很大。控制降解和恢复动力学的潜在缺陷机制的确切性质仍不确定，需要进一步研究。
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