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Permanently Magnetized Insulating Thin‐Film Devices by Reduction
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-08-29 , DOI: 10.1002/pssr.202000346 Johannes Frantti 1 , Yukari Fujioka 1 , Christopher Rouleau 2 , Alexander Puretzky 2 , Nickolay Lavrik 2
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-08-29 , DOI: 10.1002/pssr.202000346 Johannes Frantti 1 , Yukari Fujioka 1 , Christopher Rouleau 2 , Alexander Puretzky 2 , Nickolay Lavrik 2
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A reduction‐based manufacturing process for creating technologically important multilayer structures from lattice‐matched ferromagnetic insulators and ferromagnetic conductors is reported. The process is demonstrated by growing a permanently magnetized double‐layer structure, consisting of lattice‐matched conducting (Ni,Co) and insulating (Ni0.4Co0.6)3O3 layers, through a single deposition cycle. The orientation of the metal cation network is preserved after reduction. Close‐packing displacements of Ni and Co take place in such a manner that the in‐plane hexagonal arrangement is preserved. This is critical for ensuring high‐quality interfaces joining the layers. At room temperature the hysteresis loop is centered. At low temperature the oxide layer becomes ferrimagnetically ordered, accompanied by a shift of the hysteresis loop along the magnetic field axis. The shift is assigned to exchange bias phenomenon. Biaxial compressive strain is responsible for the required ferrimagnetic ordering. Spin valves and closely related magnetoresistance random access memory and spin‐transfer‐torque magnetic random access memory devices are addressed as potential applications.
中文翻译：
通过还原永久磁化的绝缘薄膜设备
据报道，基于还原的制造工艺可从晶格匹配的铁磁绝缘体和铁磁导体创建具有技术重要性的多层结构。通过生长一种永久磁化的双层结构来证明这一过程，该双层结构由晶格匹配的导电（Ni，Co）和绝缘（Ni 0.4 Co 0.6）3 O 3组成通过单个沉积循环沉积各层。还原后保留金属阳离子网络的方向。Ni和Co的紧密堆积位移以保持面内六角形排列的方式发生。这对于确保连接各层的高质量接口至关重要。在室温下，磁滞回线居中。在低温下，氧化物层变成亚铁磁性有序的，同时磁滞回线沿磁场轴移动。该偏移被指定为交换偏差现象。双轴压缩应变负责所需的亚铁磁排序。自旋阀和紧密相关的磁阻随机存取存储器以及自旋传递扭矩磁性随机存取存储器设备被视为潜在的应用。
更新日期：2020-11-02
中文翻译：
通过还原永久磁化的绝缘薄膜设备
据报道，基于还原的制造工艺可从晶格匹配的铁磁绝缘体和铁磁导体创建具有技术重要性的多层结构。通过生长一种永久磁化的双层结构来证明这一过程，该双层结构由晶格匹配的导电（Ni，Co）和绝缘（Ni 0.4 Co 0.6）3 O 3组成通过单个沉积循环沉积各层。还原后保留金属阳离子网络的方向。Ni和Co的紧密堆积位移以保持面内六角形排列的方式发生。这对于确保连接各层的高质量接口至关重要。在室温下，磁滞回线居中。在低温下，氧化物层变成亚铁磁性有序的，同时磁滞回线沿磁场轴移动。该偏移被指定为交换偏差现象。双轴压缩应变负责所需的亚铁磁排序。自旋阀和紧密相关的磁阻随机存取存储器以及自旋传递扭矩磁性随机存取存储器设备被视为潜在的应用。
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