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Thermally Activated Gold‐Mediated Transition Metal Dichalcogenide Exfoliation and a Unique Gold‐Mediated Transfer
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-08-28 , DOI: 10.1002/pssr.202000408
Max Heyl 1 , David Burmeister 1 , Thorsten Schultz 2, 3 , Sebastian Pallasch 1 , Giovanni Ligorio 1 , Norbert Koch 2, 3 , Emil J. W. List-Kratochvil 1, 4
Affiliation  

Layered materials like transition metal dichalcogenides (TMDCs) enable exciting new physics in their 2D limit. Combined with successful demonstrations of 2D transistors and devices, the need for high‐quality large‐scale monolayers increases. In this light, scalable gold‐mediated exfoliations attract broad attention to supersede the traditional scotch tape method as a means for high‐quality materials. Gold proved to be suitably adhesive for the exfoliation of several 2D materials, including TMDCs. Previously reported methods rely on a simple press and peel mechanism. However, herein, a gold‐mediated exfoliation enabled by low‐temperature annealing is presented for the first time. This simple modification potentially increases the range of external conditions under which gold‐mediated exfoliations operate in a robust manner. The exfoliation achieves scaling with parent crystal areas, rendering it on par with previously reported methods. On top of that, a unique gold‐mediated transfer concept is introduced, where gold is repurposed as a metallic (polymer‐free) transfer membrane. The transfer allows the deterministic and clean relocation of the exfoliated monolayers onto technologically relevant substrates like SiO2/Si. The process is benchmarked using MoS2 as the prototypical TMDC and monolayer areas up to ≈80 mm2 are successfully exfoliated and transferred.

中文翻译:

热活化金介导的过渡金属二硫属化物剥落和独特的金介导转移

诸如过渡金属二硫化碳(TMDC)之类的分层材料在其2D极限内实现了令人兴奋的新物理学。结合成功的2D晶体管和器件演示,对高质量大规模单层膜的需求增加。有鉴于此,可扩展的以金为媒介的去角质引起了广泛的关注,以取代传统的透明胶带方法,成为高质量材料的一种手段。事实证明,金适合剥落包括TMDC在内的多种2D材料。先前报道的方法依赖于简单的压榨和剥离机制。但是,本文首次介绍了通过低温退火实现的金介导的剥离。这种简单的修改可能会增加外部条件的作用范围,在这种条件下,金介导的剥脱作用会很强健。剥落可实现与母体晶体区域的缩放,使其与以前报道的方法相当。最重要的是,引入了独特的金介导的转移概念,其中金被重新用作金属(无聚合物)转移膜。转移可将剥落的单层膜确定性且干净地重新定位到技术相关的基材(如SiO)上2 /硅。该过程使用MoS 2作为标准TMDC进行了基准测试,成功剥离并转移了高达≈80mm 2的单层区域。
更新日期:2020-11-02
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