Interactions of ionizing radiations with cells could result in DNA base damage as well as SSB and DSB (single- and double-strand breaks). The mis-repaired damage can result in the cell death, genetic diseases, or cancer. Monte Carlo simulations allow us to determine the types of the DNA damage and their rates of occurrence. Here, we have employed the default Geant4-DNA and CPA100 cross section models (hereafter referred to as G4-DNA-default and G4-DNA-option6) for transporting electron beams of 0.011 – 100 keV through liquid water and hence simulating the physical and chemical interactions that are the reasons for potential direct and indirect damage to the DNA by electrons and hydroxyl radicals, respectively. Herewith, simple and complex SSB and DSB damage yields, frequency distributions of the direct and indirect damage, and the frequency of the deposited energies by electrons were evaluated and the results were compared with published experimental data and simulations. Overall, the G4-DNA-option6 results compare better with experiment than the results of G4-DNA-default.

电离辐射与细胞的相互作用可能导致DNA碱基损伤以及SSB和DSB（单链和双链断裂）。修复不当的损坏可能导致细胞死亡，遗传疾病或癌症。蒙特卡洛模拟使我们能够确定DNA损伤的类型及其发生率。在这里，我们采用默认的Geant4-DNA和CPA100横截面模型（以下称为G4-DNA-default和G4-DNA-option6）将0.011 – 100 keV的电子束传输通过液态水，从而模拟了物理和物理化学相互作用分别是电子和羟基自由基可能直接和间接破坏DNA的原因。因此，简单而复杂的SSB和DSB损害产生率，直接和间接损害的频率分布，并评估了电子沉积能量的频率，并将结果与​​已发表的实验数据和模拟进行了比较。总体而言，G4-DNA-option6结果与实验结果相比，G4-DNA-default结果更好。