Abstract In the current study, efforts have been made to acquire tin telluride quantum dot (QD) thin films that work at room temperature and in the region of visible and near-infrared (NIR). SnTe ingot and thin films were formed using the solid solution and inert gas condensation (IGC) techniques respectively. A cubic polymorph structure was identified using XRD for the prepared SnTe ingot, while grazing incident in-plane X-ray diffraction (GIIXD) and HR-TEM electron diffraction was used for identifying the thin films. The average particle size was found to increase from 2.3 to 9.6 nm with increasing film thickness from 5 to 25 nm. The optical gap of thin film QDs is wider than those of bulk samples; this is attributable to the quantum confinement effect. As a result of quantum confinement, SnTe thin films have optical gap values in the visible and NIR region (2–0.85 eV) instead of being in the infrared region (0.19 eV) of their bulk materials counterpart. The electronic transition was described by studying various important optical parameters such as optical conductivity ( σ op ), interband transition strength (JCV), and surface and volume energy loss functions (SELF, VELF). Electrical conductivity shows a degenerate semiconductor performance. I–V characteristic show symmetric nonlinear behavior for 10 and 15 nm film thickness.

中文翻译：

---

碲化锡量子点薄膜：尺寸相关的结构、光学和电学特性

摘要 在目前的研究中，已经努力获得在室温和可见光和近红外 (NIR) 区域工作的碲化锡量子点 (QD) 薄膜。分别使用固溶体和惰性气体冷凝 (IGC) 技术形成 SnTe 锭和薄膜。对于制备的 SnTe 锭，使用 XRD 鉴定立方多晶型结构，同时使用掠入射面内 X 射线衍射 (GIIXD) 和 HR-TEM 电子衍射来鉴定薄膜。发现平均粒径随着膜厚度从 5 nm 增加到 25 nm 而从 2.3 nm 增加到 9.6 nm。薄膜量子点的光学间隙比大块样品的光学间隙宽；这归因于量子限制效应。由于量子限制，SnTe 薄膜在可见光和 NIR 区域 (2–0.85 eV) 中具有光学间隙值，而不是在它们的大块材料对应物的红外区域 (0.19 eV) 中。通过研究各种重要的光学参数，如光导率 (σ op )、带间跃迁强度 (JCV) 以及表面和体积能量损失函数 (SELF、VELF)，描述了电子跃迁。导电性显示出退化的半导体性能。I-V 特性显示了 10 和 15 nm 薄膜厚度的对称非线性行为。以及表面和体积能量损失函数（SELF、VELF）。导电性显示出退化的半导体性能。I-V 特性显示了 10 和 15 nm 薄膜厚度的对称非线性行为。以及表面和体积能量损失函数（SELF、VELF）。导电性显示出退化的半导体性能。I-V 特性显示了 10 和 15 nm 薄膜厚度的对称非线性行为。