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Chemically deposited PbS thin films by reaction media with glycine for use in photovoltaics
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.mssp.2020.105405
Yesica B. Castillo-Sánchez , Luis A. González

Abstract PbS thin films were chemically deposited on glass substrates using alkaline aqueous solutions containing glycine-Pb complexes. Highly compact and adherent films, formed by pyramid-like particles, crystallized in the cubic structure of galena-type PbS. The specular nature and compactness of the films was enhanced with the increase of the bath pH, as confirmed through the analysis of optical and electrical properties. The optical band gap energy and conductivity of the photosensitive PbS films were found in the range of 1.39–1.53 eV and 44.7 to 153.9 mS/cm, respectively. The photovoltaic characteristics of CdS/PbS heterojunction devices were investigated. The photovoltaic device with structure SnO2:F/CdS (~120 nm)/PbS(~180 nm)/C had an open circuit voltage of 120 mV and a short circuit current density of 0.85 mA/cm2, under illumination intensity of 100 mW/cm2.

中文翻译:

通过与甘氨酸反应介质化学沉积的 PbS 薄膜,用于光伏

摘要 使用含有甘氨酸-铅配合物的碱性水溶液在玻璃基板上化学沉积 PbS 薄膜。由金字塔状颗粒形成的高度致密和粘附的薄膜,在方铅矿型 PbS 的立方结构中结晶。通过光学和电学性质的分析证实,随着浴槽 pH 值的增加,薄膜的镜面反射性质和致密性得到增强。光敏 PbS 薄膜的光学带隙能量和电导率分别在 1.39–1.53 eV 和 44.7 到 153.9 mS/cm 的范围内。研究了 CdS/PbS 异质结器件的光伏特性。结构为 SnO2:F/CdS (~120 nm)/PbS(~180 nm)/C 的光伏器件的开路电压为 120 mV,短路电流密度为 0.85 mA/cm2,
更新日期:2021-01-01
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