Abstract The temperature dependence of the photoluminescence (PL) intensity of 3.90 eV in microcrystalline hexagonal boron nitride is studied in the range of 7-1100 K. The results obtained have been analyzed within the band model of energy levels of donor-acceptor pairs based on impurity (ON CN) complexes. Luminescence enhancement processes at T 220 K, when directly excited, the samples diminish the PL intensity because of the processes of thermal ionization of the donor level of the ON-center (122 meV) and the deep acceptor level of the CN-center (1420 meV) as parts of the (ON CN)-complex. In this case, the temperature enhancement region with an activation energy of 15 meV is due to the decay of a bound Wannier-Mott exciton followed by transfer of excitation to the associated donor-acceptor pair. With band-to-band excitation at T > 220 K, the temperature peculiarities of the PL under study are determined by non-radiative relaxation processes with activation energies of 57 and 252 meV, which are caused by shallow donor levels of VN- and ON-centers, respectively.

中文翻译：

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在 7-1100 K 范围内的带间和子带激发下六方氮化硼的 3.9 eV 光致发光中的温度效应

摘要 研究了微晶六方氮化硼中 3.90 eV 光致发光 (PL) 强度在 7-1100 K 范围内的温度依赖性。在基于给体-受体对能级的带模型中分析了所得结果。杂质 (ON CN) 络合物。T 220 K 的发光增强过程，当直接激发时，由于 ON 中心的施主能级 (122 meV) 和 CN 中心的深受体能级 (1420 meV）作为（ON CN）复合体的一部分。在这种情况下，具有 15 meV 活化能的温度增强区域是由于结合的 Wannier-Mott 激子的衰变，随后激发转移到相关的供体-受体对。在 T > 220 K 时进行带间激发，