We propose and fabricate a novel structure-simplified resonant tunneling diode (RTD) terahertz (THz) oscillator without metal-insulator-metal (MIM) capacitors. In conventional RTD THz oscillators, the DC and RF circuits are separated by MIM capacitors. In the proposed oscillator, the DC-to-RF separation is based on the difference between the impedances of the antenna and biasing wire inductances in the low-frequency range and those in the THz range. Thus, by removing MIM capacitors, we simplify the device structure. We also introduce an InP etch stopper layer in the RTD epitaxial structure for easy formation of an airbridge. Owing to the simple structure and the introduction of the etch stopper layer, the fabrication process is significantly simplified. We successfully fabricated novel RTD oscillators using a simple fabrication process. Oscillation frequency of up to 742 GHz and output power of ~ 10 μW up to 600 GHz were obtained, respectively. The novel RTD oscillator is expected to be suitable for massive array configurations that could enable a wide range of practical THz applications.

我们提出并制造了一种新型的，无需金属-绝缘体-金属（MIM）电容器的简化结构的谐振隧穿二极管（RTD）太赫兹（THz）振荡器。在传统的RTD THz振荡器中，DC和RF电路由MIM电容器隔开。在提出的振荡器中，DC-RF分离基于低频范围和THz范围内天线阻抗和偏置线电感之间的差异。因此，通过去除MIM电容器，我们简化了器件结构。我们还在RTD外延结构中引入了InP蚀刻停止层，以便于形成气桥。由于结构简单和蚀刻停止层的引入，大大简化了制造工艺。我们使用简单的制造工艺成功地制造了新型RTD振荡器。分别获得了高达742 GHz的振荡频率和高达600 GHz的〜10μW的输出功率。新型RTD振荡器有望适合大规模阵列配置，从而可以实现各种实际的THz应用。