Studying local variations in the Seebeck coefficient of materials is important for understanding and optimizing their thermoelectric properties, yet most thermoelectric measurements are global over a whole device or material, thus overlooking spatial divergences in the signal and the role of local variation and internal structure. Such variations can be caused by local defects, metallic contacts or interfaces that often substantially influence thermoelectric properties, especially in two dimensional materials. Here, we demonstrate scanning thermal gate microscopy, a non-destructive method to obtain high resolution 2-dimensional maps of the thermovoltage, to study graphene samples. We demonstrate the efficiency of this newly developed method by measuring local Seebeck coefficient in a graphene ribbon and in a junction between single-layer and bilayer graphene.

中文翻译：

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通过扫描热门显微镜直接绘制二维材料纳米结构中局部塞贝克系数的图

研究材料的塞贝克系数的局部变化对于理解和优化其热电特性很重要，但是大多数热电测量是整个设备或材料的全局测量，因此可以忽略信号中的空间差异以及局部变化和内部结构的作用。这种变化可能是由局部缺陷，金属触点或界面引起的，这些缺陷通常会严重影响热电性能，尤其是在二维材料中。在这里，我们演示了扫描热门显微镜，这是一种获取热电压的高分辨率二维图的无损方法，用于研究石墨烯样品。