This study investigates the analogue performance of a III–V tunnelling field-effect transistor (TFET). To explore the circuit performance of the TFET, a T-shaped TFET (TTFET) structure is investigated and its performance parameters are compared with a 14 nm simulation program with integrated circuit emphasis (SPICE)-based predictive technology model FinFET. The advantages and limitations of TTFET technology over its FinFET counterparts are discussed in detail by implementing the inverter, current mirror, track-and-hold (T/H), and differential amplifier circuits. It is observed that the TTFET inverter offers 1.56× higher maximum gain, 14.46× lower delay, and 12.13× lower-energy-delay product when compared with FinFET inverter in Fan-Out1 (FO1) configuration at V _DD = 0.3 V. The TTFET-based current mirror and T/H circuit perform superior to their FinFET counterparts in terms of accuracy and delay. The TTFET-based differential amplifier provides 24.63 dB higher differential gain and 21.5 dB higher common-mode rejection ratio when compared with FinFET amplifier. Finally, the impact of the variation in process parameters on the device and circuit performance has been investigated. The standard deviation of 20% in oxide thickness, 20% in channel thickness, 20% in source doping, and 2% in metal work function results in a standard deviation 2.56% in delay of FO1 inverter from its nominal value.

中文翻译：

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T形隧道FET的电路性能评估

这项研究调查了III–V隧穿场效应晶体管（TFET）的模拟性能。为了探索TFET的电路性能，研究了T形TFET（TTFET）结构，并将其性能参数与基于集成电路重点（SPICE）的预测技术模型FinFET的14 nm仿真程序进行了比较。通过实现逆变器，电流镜，采样保持（T / H）和差分放大器电路，详细讨论了TTFET技术相对于FinFET同类产品的优势和局限性。观察到，与采用Fan-Out1（FO1）配置的FinFET逆变器相比，TTFET逆变器在以下条件下提供的最大增益高1.56倍，延迟降低14.46倍，能耗降低12.13倍。V _DD = 0.3V。基于TTFET的电流镜和T / H电路在精度和延迟方面均优于FinFET。与FinFET放大器相比，基于TTFET的差分放大器可提供24.63 dB的更高差分增益和21.5 dB的共模抑制比。最后，研究了工艺参数变化对器件和电路性能的影响。氧化物厚度20％，沟道厚度20％，源极掺杂20％和金属功函数2％的标准偏差导致FO1逆变器与其标称值之间的标准偏差为2.56％。